- 品牌:
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- Diodes Incorporated (25)
- 封装/外壳:
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- 电流 - 连续漏极(Id)(25°C 时):
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- 不同 Id,Vgs 时的 Rds On(最大值):
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- 不同 Id 时的 Vgs(th)(最大值):
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- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
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- 不同 Vds 时的输入电容(Ciss)(最大值):
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- FET 功能:
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37 条记录
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 6A... |
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|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 5A... |
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|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 6A... |
-
|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 5.5... |
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|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 6... |
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|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 5A... |
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|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET N/P-CH 40V 6... |
|
2,500 | 580 | 加入购物车 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 9... |
|
2,500 | 580 | 加入购物车 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 9A... |
|
2,500 | 580 | 加入购物车 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 6A... |
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|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET N/P-CH 20V S... |
|
10,000 | 580 | 加入购物车 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 5A... |
-
|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 6A... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET 2P-CH 20V 0.9... |
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|
1 | 7,091 | 提交询价 | |||
Diodes Incorporated | MOSFET 2P-CH 20V 0.9... |
|
1 | 7,091 | 加入购物车 提交询价 | |||
Diodes Incorporated | MOSFET 2P-CH 20V 0.9... |
|
10,000 | 580 | 加入购物车 提交询价 | |||
Diodes Incorporated | MOSFET N/P-CH 20V S... |
-
|
1 | 28,176 | 提交询价 | |||
Diodes Incorporated | MOSFET N/P-CH 20V S... |
|
1 | 28,176 | 加入购物车 提交询价 | |||
Diodes Incorporated | MOSFET N/P-CH 20V S... |
|
3,000 | 27,000 | 加入购物车 提交询价 | |||
Diodes Incorporated | MOSFET N/P-CH 20V S... |
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|
1 | 209,858 | 提交询价 |