- 品牌:
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- IXYS (7)
- NXP USA Inc. (3)
- ON Semiconductor (11)
- Vishay Siliconix (2)
- 封装/外壳:
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- 供应商器件封装:
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- 功率耗散(最大值):
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- 电流 - 连续漏极(Id)(25°C 时):
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- 驱动电压(最大 Rds On,最小 Rds On):
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- 不同 Id,Vgs 时的 Rds On(最大值):
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- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
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- 不同 Vds 时的输入电容(Ciss)(最大值):
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图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
NXP USA Inc. | MOSFET N-CH 100V D2... |
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|
1 | 580 | 提交询价 | |||
NXP USA Inc. | MOSFET N-CH 100V 147... |
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|
1 | 580 | 提交询价 | |||
NXP USA Inc. | MOSFET N-CH 100V 169... |
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|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V LD... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V LD... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 100V 26A... |
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|
1 | 580 | 提交询价 | |||
Nexperia USA Inc. | PSMN8R9-100BSE/SOT4... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 23A... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 23A... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 23A... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 25A... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 25A... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 25A... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 20A... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 20A... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 20A... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 15A... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 15A... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 15A... |
-
|
1 | 580 | 提交询价 | |||
Renesas Electronics America | MOSFET N-CH 100V 50A... |
-
|
1 | 580 | 提交询价 |