- 品牌:
-
- EPC (2)
- NXP USA Inc. (2)
- ON Semiconductor (16)
- Sanken (2)
- Vishay Siliconix (3)
- 系列:
-
- 零件状态:
-
- 工作温度:
-
- 封装/外壳:
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- 供应商器件封装:
-
- 功率耗散(最大值):
-
- 漏源电压(Vdss):
-
- 驱动电压(最大 Rds On,最小 Rds On):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
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- 不同 Id 时的 Vgs(th)(最大值):
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- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
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- Vgs(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
-
- FET 功能:
-
77 条记录
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | MOSFET P-CH 12V 6A ... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 24V 6A ... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 30V 6A ... |
-
|
1 | 580 | 提交询价 | |||
NXP USA Inc. | MOSFET N-CH 30V 6A ... |
-
|
1 | 580 | 提交询价 | |||
NXP USA Inc. | MOSFET N-CH 20V 6A ... |
-
|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A ... |
-
|
1 | 580 | 提交询价 | |||
EPC | GANFET TRANS 100V ... |
-
|
1 | 580 | 提交询价 | |||
Rohm Semiconductor | MOSFET P-CH 45V 6A ... |
-
|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET P-CH 12V 6A ... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 30V 6A ... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET P-CH 40V 6A ... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 40V 6A ... |
-
|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 6A ... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET P-CH 40V 6A ... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 20V 6A ... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET P-CH 20V 6A ... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 30V 6A ... |
-
|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A ... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 800V 6A... |
-
|
1 | 580 | 提交询价 | |||
STMicroelectronics | MOSFET P-CH 30V 6A ... |
-
|
1 | 9 | 提交询价 |