- 品牌:
-
- Diodes Incorporated (10)
- ON Semiconductor (10)
- 封装/外壳:
-
- 供应商器件封装:
-
- 驱动电压(最大 Rds On,最小 Rds On):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
-
- 不同 Id 时的 Vgs(th)(最大值):
-
- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
-
44 条记录
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
ON Semiconductor | MOSFET P-CH 25V 120M... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET P-CH 25V 120M... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET P-CH 25V 0.12... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET P-CH 200V 0.1... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET P-CH 200V 0.1... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 200V 0.1... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 200V 0.1... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET P-CH 200V 0.1... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET P-CH 200V 0.1... |
-
|
2,000 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 |