- 品牌:
-
- Diodes Incorporated (146)
- Micro Commercial Co (10)
- Nexperia USA Inc. (10)
- NXP USA Inc. (14)
- ON Semiconductor (67)
- STMicroelectronics (69)
- Vishay Siliconix (143)
- 系列:
-
- 工作温度:
-
- 封装/外壳:
-
- 供应商器件封装:
-
- 功率耗散(最大值):
-
- FET 类型:
-
- 漏源电压(Vdss):
-
- 电流 - 连续漏极(Id)(25°C 时):
-
- 驱动电压(最大 Rds On,最小 Rds On):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
-
- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
- Vgs(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
-
- FET 功能:
-
544 条记录
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
ON Semiconductor | MOSFET N-CH 20V 0.36... |
-
|
1 | 5,562 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 12V 0.5A... |
-
|
1 | 1,233 | 提交询价 | |||
Diodes Incorporated | MOSFET P-CH 12V 0.2A... |
-
|
1 | 6,021 | 提交询价 | |||
Diodes Incorporated | MOSFET P-CH 20V 0.33... |
-
|
1 | 8,138 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 20V 0.6A... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 20V 0.76... |
-
|
1 | 10,946 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 30V 65A... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET NCH 20V 630M... |
-
|
1 | 1,943 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 50V 160M... |
-
|
1 | 2,478 | 提交询价 | |||
Diodes Incorporated | MOSFETP-CHAN 20V X... |
-
|
1 | 1,890 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 60V 0.34... |
-
|
1 | 1,942 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 20V 630M... |
-
|
1 | 1,981 | 提交询价 | |||
Vishay Siliconix | MOSFET P-CH 20V 3.7A... |
-
|
1 | 580 | 提交询价 | |||
Vishay Siliconix | MOSFET P-CH 12V 7.8A... |
-
|
1 | 580 | 提交询价 | |||
Vishay Siliconix | MOSFET N-CH 12V 4A ... |
-
|
1 | 580 | 提交询价 | |||
Vishay Siliconix | MOSFET N-CH 20V 400M... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 40V 130A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 30V 13.6... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 30V 8.3A... |
-
|
1 | 580 | 提交询价 | |||
Vishay Siliconix | MOSFET N-CH 12V 35A... |
-
|
1 | 580 | 提交询价 |