- 品牌:
-
- Cree/Wolfspeed (2)
- IXYS (3)
- 工作温度:
-
- 封装/外壳:
-
- 供应商器件封装:
-
- 功率耗散(最大值):
-
- 电流 - 连续漏极(Id)(25°C 时):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
-
- 不同 Id 时的 Vgs(th)(最大值):
-
- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
-
45 条记录
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | TRANS SJT 1700V 160A... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 1200V 45A ... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 1200V 160A... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 1.7KV 100A |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 1.2KV 20A |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 1.2KV 10A |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 1200V 5A |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 1200V 6A T... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 1200V 3A T... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 650V 16A T... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 650V 15A T... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 650V 8A T... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 650V 7A T... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 650V 4A T... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 650V 4A T... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 1700V 16A ... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | GEN2 SIC MOSFET 70... |
-
|
1 | 90 | 提交询价 | |||
Microsemi Corporation | GEN2 SIC MOSFET 70... |
-
|
1 | 90 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 600V 100A |
|
10 | 580 | 加入购物车 提交询价 | |||
IXYS | MOSFET N-CH |
|
10 | 580 | 加入购物车 提交询价 |