功率耗散(最大值):
电流 - 连续漏极(Id)(25°C 时):
驱动电压(最大 Rds On,最小 Rds On):
不同 Id,Vgs 时的 Rds On(最大值):
不同 Vgs 时的栅极电荷 (Qg)(最大值):
不同 Vds 时的输入电容(Ciss)(最大值):
图片 型号 品牌 描述 PDF 价格 起订量 库存 操作
APT80SM120J Microsemi Corporation
POWER MOSFET - SI...
-
1 580 提交询价
APT70SM70J Microsemi Corporation
POWER MOSFET - SI...
-
1 580 提交询价
APT25SM120S Microsemi Corporation
POWER MOSFET - SI...
-
1 580 提交询价
APT58MJ50J Microsemi Corporation
MOSFET N-CH 500V 58A...
-
1 580 提交询价
APT8018JN Microsemi Corporation
MOSFET N-CH 800V 40A...
-
1 580 提交询价
APT5012JN Microsemi Corporation
MOSFET N-CH 500V 43A...
-
1 580 提交询价
APT40M75JN Microsemi Corporation
MOSFET N-CH 400V 56A...
-
1 580 提交询价
APT40M42JN Microsemi Corporation
MOSFET N-CH 400V 86A...
-
1 580 提交询价
IXFN24N100F IXYS-RF
MOSFET N-CH 1000V 24...
-
1 580 提交询价
GA100JT17-227 GeneSiC Semiconductor
TRANS SJT 1700V 160A...
-
1 580 提交询价
GA100JT12-227 GeneSiC Semiconductor
TRANS SJT 1200V 160A...
-
1 580 提交询价
APT50MC120JCU2 Microsemi Corporation
MOSFET N-CH 1200V S...
-
1 580 提交询价
IXFN64N50PD3 IXYS
MOSFET N-CH 500V 52A...
-
1 580 提交询价
VS-FB180SA10P Vishay Semiconductor Diodes Division
MOSFET N-CH 100V 180...
-
1 580 提交询价
VS-FA38SA50LCP Vishay Semiconductor Diodes Division
MOSFET N-CH 500V 38A...
-
1 580 提交询价
APT33N90JCU3 Microsemi Corporation
MOSFET N-CH 900V 33A...
-
1 580 提交询价
APT33N90JCU2 Microsemi Corporation
MOSFET N-CH 900V 33A...
-
1 580 提交询价
APTC90DAM60T1G Microsemi Corporation
MOSFET N-CH 900V 59A...
-
1 580 提交询价
APTC90SKM60T1G Microsemi Corporation
MOSFET N-CH 900V 59A...
-
1 580 提交询价
APTML50UM90R020T1AG Microsemi Corporation
MOSFET N-CH 500V 52A...
-
1 580 提交询价
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