- 品牌:
-
- IXYS (201)
- IXYS-RF (2)
- Microsemi Corporation (187)
- STMicroelectronics (18)
- 系列:
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- 工作温度:
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- 封装/外壳:
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- 供应商器件封装:
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- 功率耗散(最大值):
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- FET 类型:
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- 漏源电压(Vdss):
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- 电流 - 连续漏极(Id)(25°C 时):
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- 不同 Id,Vgs 时的 Rds On(最大值):
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- 不同 Id 时的 Vgs(th)(最大值):
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- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
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- Vgs(最大值):
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- 不同 Vds 时的输入电容(Ciss)(最大值):
-
426 条记录
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Microsemi Corporation | POWER MOSFET - SI... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | POWER MOSFET - SI... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | POWER MOSFET - SI... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 500V 58A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 800V 40A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 500V 43A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 400V 56A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 400V 86A... |
-
|
1 | 580 | 提交询价 | |||
IXYS-RF | MOSFET N-CH 1000V 24... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 1700V 160A... |
-
|
1 | 580 | 提交询价 | |||
GeneSiC Semiconductor | TRANS SJT 1200V 160A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 1200V S... |
-
|
1 | 580 | 提交询价 | |||
IXYS | MOSFET N-CH 500V 52A... |
-
|
1 | 580 | 提交询价 | |||
Vishay Semiconductor Diodes Division | MOSFET N-CH 100V 180... |
-
|
1 | 580 | 提交询价 | |||
Vishay Semiconductor Diodes Division | MOSFET N-CH 500V 38A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 900V 33A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 900V 33A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 900V 59A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 900V 59A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 500V 52A... |
-
|
1 | 580 | 提交询价 |