- 品牌:
-
- Diodes Incorporated (61)
- Microchip Technology (14)
- NXP USA Inc. (1)
- ON Semiconductor (39)
- Vishay Siliconix (3)
- 零件状态:
-
- 工作温度:
-
- 供应商器件封装:
-
- 功率耗散(最大值):
-
- FET 类型:
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- 漏源电压(Vdss):
-
- 电流 - 连续漏极(Id)(25°C 时):
-
- 驱动电压(最大 Rds On,最小 Rds On):
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- 不同 Id,Vgs 时的 Rds On(最大值):
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- 不同 Id 时的 Vgs(th)(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
-
151 条记录
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Comchip Technology | MOSFET P-CH 50V 0.13... |
|
3,000 | 580 | 加入购物车 提交询价 | |||
Diodes Incorporated | MOSFET 41V 60V SOT2... |
|
3,000 | 580 | 加入购物车 提交询价 | |||
Rohm Semiconductor | MOSFET P-CH 30V 0.25... |
|
3,000 | 580 | 加入购物车 提交询价 | |||
NXP USA Inc. | MOSFET N-CH 60V 300M... |
-
|
1 | 580 | 提交询价 | |||
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 60V 650M... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 30V 5.8A... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 60V 280M... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 60V 280M... |
-
|
1 | 580 | 提交询价 | |||
Vishay Siliconix | MOSFET N-CH 60V 115M... |
-
|
3,000 | 580 | 提交询价 | |||
Vishay Siliconix | MOSFET N-CH 60V 115M... |
-
|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.2A... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 60V 115M... |
-
|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.7A... |
-
|
1 | 580 | 提交询价 | |||
Diodes Incorporated | MOSFET P-CH 30V 2.7A... |
-
|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 200M... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 60V 500M... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 30V 1.6A... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 30V 1.6A... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 50V 200M... |
-
|
1 | 580 | 提交询价 | |||
ON Semiconductor | MOSFET N-CH 100V 170... |
-
|
1 | 580 | 提交询价 |