- 包装:
-
- 功率耗散(最大值):
-
- 电流 - 连续漏极(Id)(25°C 时):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
-
- 不同 Id 时的 Vgs(th)(最大值):
-
- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
-
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Global Power Technologies Group | MOSFET N-CH 500V 18A... |
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|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 650V 9.5... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 600V 4.2... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 200V 18A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 600V 16A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 250V 16A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 500V 13A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 600V 12A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 500V 11A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 800V 9.5... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 600V 10A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 600V 9A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 800V 8A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 500V 8A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 900V 7A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 500V 4A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 600V 12A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 600V 10A... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 600V 7.5... |
-
|
1 | 580 | 提交询价 | |||
Global Power Technologies Group | MOSFET N-CH 650V 6.5... |
-
|
1 | 580 | 提交询价 |