- 功率耗散(最大值):
-
- 电流 - 连续漏极(Id)(25°C 时):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
-
- 不同 Id 时的 Vgs(th)(最大值):
-
- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
-
27 条记录
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Microsemi Corporation | MOSFET N-CH 900V 59A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 900V 59A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 500V 52A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 1200V 31... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 900V 59A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 200V 109... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 900V 59A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 100V 154... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 600V 45A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 1200V 15... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 1200V 18... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 1200V 15... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 1200V 18... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 1000V 20... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 1000V 20... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 1000V 40... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 800V 28A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 800V 28A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 600V 72A... |
-
|
1 | 580 | 提交询价 | |||
Microsemi Corporation | MOSFET N-CH 600V 72A... |
-
|
1 | 580 | 提交询价 |