- 功率耗散(最大值):
-
- 电流 - 连续漏极(Id)(25°C 时):
-
- 驱动电压(最大 Rds On,最小 Rds On):
-
- 不同 Id,Vgs 时的 Rds On(最大值):
-
- 不同 Id 时的 Vgs(th)(最大值):
-
- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
-
- 不同 Vds 时的输入电容(Ciss)(最大值):
-
图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET N-CH 400V 170... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 60V 2.9A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 500V 400... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 60V 2.9A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 100V 1.1... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 600V 120... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 240V 350... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET P-CH 60V 1.17... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 100V 1.1... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 60V 1.8A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 240V 350... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 100V 370... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET P-CH 250V 0.2... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 240V 350... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET P-CH 60V 2.9A... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 100V 1.7... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 100V 1.7... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET P-CH 250V 0.4... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET P-CH 100V 0.6... |
-
|
1 | 580 | 提交询价 |