系列:
零件状态:
工作温度:
功率耗散(最大值):
FET 类型:
漏源电压(Vdss):
电流 - 连续漏极(Id)(25°C 时):
驱动电压(最大 Rds On,最小 Rds On):
不同 Vgs 时的栅极电荷 (Qg)(最大值):
Vgs(最大值):
不同 Vds 时的输入电容(Ciss)(最大值):
图片 型号 品牌 描述 PDF 价格 起订量 库存 操作
2SK3670,F(M Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK3670,F(J Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK3670(T6CANO,F,M Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK3670(T6CANO,A,F Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK3670(F,M) Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2989,T6F(J Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2989,F(J Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2989(TPE6,F,M) Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2989(T6CANO,F,M Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2989(T6CANO,A,F Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2962,T6WNLF(M Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2962,T6WNLF(J Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2962,T6F(M Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2962,T6F(J Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2962,F(J Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2962(TE6,F,M) Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2962(T6CANO,F,M Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
2SK2962(T6CANO,A,F Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 580 提交询价
RJK6011DJE-00#Z0 Renesas Electronics America
MOSFET N-CH 600V 0.1...
-
1 580 提交询价
2SK4093TZ-E Renesas Electronics America
MOSFET N-CH 250V 1A...
-
1 580 提交询价
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