安装类型:
存储器类型:
存储器格式:
写周期时间 - 字,页:
233 条记录
图片 型号 品牌 描述 PDF 价格 起订量 库存 操作
EDB4432BBBJ-1DAUT-F-R TR Micron Technology Inc.
IC DRAM 4G PARALL...
-
1,000 580 提交询价
EDB4064B3PP-1D-F-D Micron Technology Inc.
IC DRAM 4G PARALL...
-
1 580 提交询价
MT47H64M8CF-187E:G Micron Technology Inc.
IC DRAM 512M PARAL...
-
1 580 提交询价
MT47H512M4EB-187E:C Micron Technology Inc.
IC DRAM 2G PARALL...
-
1 580 提交询价
MT47H256M8EB-187E:C Micron Technology Inc.
IC DRAM 2G PARALL...
-
1 580 提交询价
MT47H128M4CF-187E:G Micron Technology Inc.
IC DRAM 512M PARAL...
-
1 580 提交询价
MT41K1G4THD-187E:D Micron Technology Inc.
IC DRAM 4G PARALL...
-
1 580 提交询价
MT41J64M16JT-187E:G Micron Technology Inc.
IC DRAM 1G PARALL...
-
1 580 提交询价
MT41J512M8THD-187E:D Micron Technology Inc.
IC DRAM 4G PARALL...
-
1 580 提交询价
MT47H64M16HR-187E:H Micron Technology Inc.
IC DRAM 1G PARALL...
-
1 580 提交询价
MT47H32M16HR-187E:G Micron Technology Inc.
IC DRAM 512M PARAL...
-
1 580 提交询价
MT47H128M8CF-187E:H Micron Technology Inc.
IC DRAM 1G PARALL...
-
1 580 提交询价
MT41J256M8JE-187E:A Micron Technology Inc.
IC DRAM 2G PARALL...
-
1 580 提交询价
IS43LD32320C-18BLI-TR ISSI, Integrated Silicon Solution Inc
IC DRAM 1G PARALL...
¥67.01
2,000 580 加入购物车 提交询价
IS43LD16640C-18BLI-TR ISSI, Integrated Silicon Solution Inc
IC DRAM 1G PARALL...
¥65.45
2,000 580 加入购物车 提交询价
MT29RZ4B2DZZHHTB-18I.80F TR Micron Technology Inc.
IC FLASH RAM 4G PA...
¥64.63
2,000 580 加入购物车 提交询价
EDB4432BBBJ-1D-F-R Micron Technology Inc.
IC DRAM 4G PARALL...
¥64.51
1,000 580 加入购物车 提交询价
EDB4432BBPA-1D-F-R TR Micron Technology Inc.
IC DRAM 4G PARALL...
¥64.51
1,000 580 加入购物车 提交询价
EDB4432BBPA-1D-F-D Micron Technology Inc.
IC DRAM 4G PARALL...
¥64.51
1,680 580 加入购物车 提交询价
EDB2432B4MA-1DIT-F-R TR Micron Technology Inc.
IC DRAM 2G PARALL...
¥63.53
1,000 580 加入购物车 提交询价
1 / 12 页 共 233 条