供应商器件封装:
存储容量:
存储器类型:
写周期时间 - 字,页:
图片 型号 品牌 描述 PDF 价格 起订量 库存 操作
MT29F256G08CBCBBJ4-5M:B Micron Technology Inc.
IC FLASH
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1 580 提交询价
MT46V128M4CY-5B:J Micron Technology Inc.
IC DRAM 512M PARAL...
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1 580 提交询价
MT46V32M16CV-5B IT:J Alliance Memory, Inc.
IC DRAM 512M PARAL...
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1 580 提交询价
IS42S32200E-5TL ISSI, Integrated Silicon Solution Inc
IC DRAM 64M PARALL...
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1 580 提交询价
IS42S16100F-5TL ISSI, Integrated Silicon Solution Inc
IC DRAM 16M PARALL...
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1 580 提交询价
W972GG8JB25I Winbond Electronics
IC DRAM 2G PARALL...
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1 580 提交询价
W971GG8JB25I Winbond Electronics
IC DRAM 1G PARALL...
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1 580 提交询价
AS4C8M16D1-5TCN Alliance Memory, Inc.
IC DRAM 128M PARAL...
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1 580 提交询价
AS4C4M16D1-5TCN Alliance Memory, Inc.
IC DRAM 64M PARALL...
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1 580 提交询价
AS4C32M16D1-5TCN Alliance Memory, Inc.
IC DRAM 512M PARAL...
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1 580 提交询价
AS4C16M16D1-5TCN Alliance Memory, Inc.
IC DRAM 256M PARAL...
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1 580 提交询价
MT46V64M8P-5B L IT:F Micron Technology Inc.
IC DRAM 512M PARAL...
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1 580 提交询价
MT46V64M4P-5B:K Micron Technology Inc.
IC DRAM 256M PARAL...
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1 580 提交询价
MT46V32M16P-5B:J Micron Technology Inc.
IC DRAM 512M PARAL...
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1,080 580 提交询价
MT46V32M16P-5B IT:J Micron Technology Inc.
IC DRAM 512M PARAL...
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1,080 580 提交询价
MT46V32M16CY-5B:J Micron Technology Inc.
IC DRAM 512M PARAL...
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1 580 提交询价
MT46V32M16BN-5B L IT:F Micron Technology Inc.
IC DRAM 512M PARAL...
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1 580 提交询价
MT46V32M16BN-5B IT:F Micron Technology Inc.
IC DRAM 512M PARAL...
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1 580 提交询价
MT46V16M16P-5B:M Micron Technology Inc.
IC DRAM 256M PARAL...
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1,080 580 提交询价
MT46H8M16LFBF-5 IT:K Micron Technology Inc.
IC DRAM 128M PARAL...
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1 580 提交询价
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