- 品牌：
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- Macronix (9)
- Winbond Electronics (45)
- 系列：
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- 电压 - 电源：
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- 工作温度：
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- 技术：
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- 安装类型：
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- 封装/外壳：
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- 供应商器件封装：
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- 存储容量：
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- 写周期时间 - 字，页：
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- 已选条件：
840 条记录
| 图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
|---|---|---|---|---|---|---|---|---|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 512M PARAL... |
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|
1 | 580 | 提交询价 | ||
|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 16M PARALL... |
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|
1 | 580 | 提交询价 | ||
|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 16M PARALL... |
-
|
1 | 580 | 提交询价 | ||
|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 16M PARALL... |
-
|
1 | 580 | 提交询价 | ||
|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 16M PARALL... |
-
|
1 | 580 | 提交询价 | ||
|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 16M PARALL... |
-
|
1 | 580 | 提交询价 | ||
|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 16M PARALL... |
-
|
1 | 580 | 提交询价 | ||
|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 256M PARAL... |
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|
1 | 580 | 提交询价 | ||
|
|
Alliance Memory, Inc. | IC DRAM 128M PARAL... |
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|
1 | 580 | 提交询价 | ||
|
|
Alliance Memory, Inc. | IC DRAM 64M PARALL... |
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|
1 | 580 | 提交询价 | ||
|
|
Alliance Memory, Inc. | IC DRAM 256M PARAL... |
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|
1 | 580 | 提交询价 | ||
|
|
Cypress Semiconductor Corp | IC SRAM 18M PARALL... |
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|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 256M PARAL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 128M PARAL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 128M PARAL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 256M PARAL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 256M PARAL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 256M PARAL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 256M PARAL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 128M PARAL... |
-
|
1 | 580 | 提交询价 |
