系列:
电压 - 电源:
技术:
封装/外壳:
供应商器件封装:
存储容量:
写周期时间 - 字,页:
48,247 条记录
图片 型号 品牌 描述 PDF 价格 起订量 库存 操作
MT41K1G8SN-125:A TR Micron Technology Inc.
IC DRAM 8G PARALL...
-
1 580 提交询价
MT41K1G8SN-107:A TR Micron Technology Inc.
IC DRAM 8G PARALL...
-
1 580 提交询价
MT51K256M32HF-70:A Micron Technology Inc.
IC GDDR5 8G 256MX32 F...
-
1 580 提交询价
MT51K256M32HF-60:A Micron Technology Inc.
IC GDDR5 8G 256MX32 F...
-
1 580 提交询价
MT51J256M32HF-60S:A Micron Technology Inc.
IC GDDR5 8G 256MX32 F...
-
1 580 提交询价
MT51J256M32HF-50:A Micron Technology Inc.
IC GDDR5 8G 256MX32 F...
-
1 580 提交询价
MT29F512G08CECBBJ4-5M:B Micron Technology Inc.
IC FLASH
-
1 580 提交询价
MT29F256G08CBCBBJ4-5M:B Micron Technology Inc.
IC FLASH
-
1 580 提交询价
R1RW0416DSB-2PR#B0 Renesas Electronics America
IC SRAM IBIS ASYN...
-
1 580 提交询价
R1RW0416DSB-2PI#B0 Renesas Electronics America
IC SRAM IBIS ASYN...
-
1 580 提交询价
R1RW0416DSB-2LR#B0 Renesas Electronics America
IC SRAM IBIS ASYN...
-
1 580 提交询价
R1RP0416DSB-2PR#B0 Renesas Electronics America
IC SRAM IBIS ASYN...
-
1 580 提交询价
R1RP0416DSB-2PI#B0 Renesas Electronics America
IC SRAM IBIS ASYN...
-
1 580 提交询价
R1RP0416DSB-2LR#B0 Renesas Electronics America
IC SRAM IBIS ASYN...
-
1 580 提交询价
R1RW0416DSB-2PR#D1 Renesas Electronics America
IC SRAM IBIS ASYN...
-
1 580 提交询价
R1RW0416DSB-2LR#D1 Renesas Electronics America
IC SRAM IBIS ASYN...
-
1 580 提交询价
R1RP0416DSB-2PR#D1 Renesas Electronics America
IC SRAM IBIS ASYN...
-
1 580 提交询价
R1RP0416DSB-2PI#D1 Renesas Electronics America
IC SRAM IBIS ASYN...
-
1 580 提交询价
R1RP0416DSB-2LR#D1 Renesas Electronics America
IC SRAM IBIS ASYN...
-
1 580 提交询价
GD25VE32CVIGR GigaDevice Semiconductor (HK) Limited
NOR FLASH
-
1 580 提交询价
1 / 2413 页 共 48247 条