- 品牌：
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- Winbond Electronics (15)
- 电压 - 电源：
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- 技术：
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- 封装/外壳：
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- 供应商器件封装：
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- 存储容量：
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- 时钟频率：
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- 写周期时间 - 字，页：
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242 条记录
| 图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
|---|---|---|---|---|---|---|---|---|
|
Micron Technology Inc. | IC DRAM 4G PARALL... |
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|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 4G PARALL... |
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|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 4G PARALL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 4G PARALL... |
-
|
1 | 580 | 提交询价 | ||
|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 1G PARALL... |
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|
1 | 580 | 提交询价 | ||
|
|
Alliance Memory, Inc. | IC DRAM 1G PARALL... |
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|
1 | 580 | 提交询价 | ||
|
|
Alliance Memory, Inc. | IC DRAM 4G PARALL... |
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|
1 | 580 | 提交询价 | ||
|
|
Alliance Memory, Inc. | IC DRAM 2G PARALL... |
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|
1 | 580 | 提交询价 | ||
|
|
Alliance Memory, Inc. | IC DRAM 4G PARALL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Alliance Memory, Inc. | IC DRAM 1G PARALL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Alliance Memory, Inc. | IC DRAM 2G PARALL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 1G PARALL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 1G PARALL... |
-
|
1 | 580 | 提交询价 | ||
|
|
Micron Technology Inc. | IC DRAM 512M PARAL... |
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|
1 | 580 | 提交询价 | ||
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|
ISSI, Integrated Silicon Solution Inc | IC DRAM 4G PARALL... |
|
190 | 580 | 加入购物车 提交询价 | ||
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|
ISSI, Integrated Silicon Solution Inc | IC DRAM 4G PARALL... |
|
190 | 580 | 加入购物车 提交询价 | ||
|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 4G PARALL... |
|
190 | 580 | 加入购物车 提交询价 | ||
|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 1G PARALL... |
|
190 | 580 | 加入购物车 提交询价 | ||
|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 2G PARALL... |
|
1,500 | 580 | 加入购物车 提交询价 | ||
|
|
ISSI, Integrated Silicon Solution Inc | IC DRAM 1G PARALL... |
|
190 | 580 | 加入购物车 提交询价 |
