- 品牌:
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- Diodes Incorporated (14)
- 封装/外壳:
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- 供应商器件封装:
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- 功率耗散(最大值):
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- 电流 - 连续漏极(Id)(25°C 时):
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- 不同 Id,Vgs 时的 Rds On(最大值):
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- 不同 Id 时的 Vgs(th)(最大值):
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- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
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图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | X34 PB-F CST3 FET (L... |
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|
1 | 9,862 | 提交询价 | |||
Toshiba Semiconductor and Storage | X34 PB-F CST3 FET (L... |
|
1 | 9,862 | 加入购物车 提交询价 | |||
Toshiba Semiconductor and Storage | X34 PB-F CST3 FET (L... |
|
10,000 | 580 | 加入购物车 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 0.1A... |
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|
1 | 580 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.1A... |
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|
1 | 580 | 提交询价 | |||
Diodes Incorporated | 2N7002 FAMILY X1-DFN... |
|
3,000 | 580 | 加入购物车 提交询价 | |||
Diodes Incorporated | 2N7002 FAMILY X1-DFN... |
|
10,000 | 580 | 加入购物车 提交询价 | |||
Central Semiconductor Corp | MOSFET P-CH 20V 0.1A... |
|
5,000 | 580 | 加入购物车 提交询价 | |||
Central Semiconductor Corp | MOSFET N-CH 20V 0.1A... |
|
5,000 | 580 | 加入购物车 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET N-CH 30V ES... |
|
4,000 | 580 | 加入购物车 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.1A... |
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|
1 | 158 | 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.1A... |
|
1 | 158 | 加入购物车 提交询价 | |||
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.1A... |
|
3,000 | 580 | 加入购物车 提交询价 | |||
Central Semiconductor Corp | MOSFET N-CH 20V 0.1A... |
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|
1 | 1,023 | 提交询价 | |||
Central Semiconductor Corp | MOSFET N-CH 20V 0.1A... |
|
1 | 1,023 | 加入购物车 提交询价 | |||
Central Semiconductor Corp | MOSFET N-CH 20V 0.1A... |
|
8,000 | 580 | 加入购物车 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 60V X2-... |
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|
1 | 2,360 | 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 60V X2-... |
|
1 | 2,360 | 加入购物车 提交询价 | |||
Diodes Incorporated | MOSFET N-CH 60V X2-... |
|
3,000 | 580 | 加入购物车 提交询价 | |||
Diodes Incorporated | MOSFET N-CHAN 41V ... |
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|
1 | 4,043 | 提交询价 |