功率耗散(最大值):
电流 - 连续漏极(Id)(25°C 时):
驱动电压(最大 Rds On,最小 Rds On):
不同 Id,Vgs 时的 Rds On(最大值):
不同 Id 时的 Vgs(th)(最大值):
不同 Vgs 时的栅极电荷 (Qg)(最大值):
不同 Vds 时的输入电容(Ciss)(最大值):
FET 功能:
图片 型号 品牌 描述 PDF 价格 起订量 库存 操作
GP2M010A065H Global Power Technologies Group
MOSFET N-CH 650V 9.5...
-
1 580 提交询价
GP2M010A065F Global Power Technologies Group
MOSFET N-CH 650V 9.5...
-
1 580 提交询价
GP2M004A065PG Global Power Technologies Group
MOSFET N-CH 650V 4A...
-
1 580 提交询价
GP2M004A065FG Global Power Technologies Group
MOSFET N-CH 650V 4A...
-
1 580 提交询价
GP1M006A065FH Global Power Technologies Group
MOSFET N-CH 650V 5.5...
-
1 580 提交询价
IPW65R045C7300XKSA1 Infineon Technologies
MOSFET N-CH 650V TO...
-
1 580 提交询价
TPH3208LD Transphorm
GANFET N-CH 650V 20A...
-
1 580 提交询价
TSM7N65ACI C0G Taiwan Semiconductor Corporation
MOSFET N-CHANNEL...
-
1 580 提交询价
TSM2NB65CH X0G Taiwan Semiconductor Corporation
MOSFET N-CHANNEL...
-
1 580 提交询价
SPP20N60CFDHKSA1 Infineon Technologies
MOSFET N-CH 650V TO...
-
1 580 提交询价
SPP07N60C3HKSA1 Infineon Technologies
MOSFET N-CH 650V TO...
-
1 580 提交询价
AOT8N65_001 Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 8A...
-
1 580 提交询价
TPH3206LDB Transphorm
GANFET N-CH 650V 16A...
-
1 580 提交询价
IPZ60R037P7XKSA1 Infineon Technologies
MOSFET N-CH 650V 76A...
-
1 580 提交询价
SPI15N65C3HKSA1 Infineon Technologies
MOSFET N-CH 650V 15A...
-
1 580 提交询价
SPI11N65C3HKSA1 Infineon Technologies
MOSFET N-CH 650V 11A...
-
1 580 提交询价
IPW65R310CFDFKSA1 Infineon Technologies
MOSFET N-CH 650V 11....
-
1 580 提交询价
IPW65R280C6FKSA1 Infineon Technologies
MOSFET N-CH 650V 13....
-
1 580 提交询价
IPW65R190E6FKSA1 Infineon Technologies
MOSFET N-CH 650V 20....
-
1 580 提交询价
IPW65R190C6FKSA1 Infineon Technologies
MOSFET N-CH 650V 20....
-
1 580 提交询价
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