- 品牌:
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- Infineon Technologies (221)
- IXYS (16)
- ON Semiconductor (39)
- STMicroelectronics (72)
- Transphorm (8)
- Vishay Siliconix (45)
- 系列:
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- 封装/外壳:
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- 供应商器件封装:
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- 功率耗散(最大值):
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- 电流 - 连续漏极(Id)(25°C 时):
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- 不同 Id,Vgs 时的 Rds On(最大值):
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- 不同 Id 时的 Vgs(th)(最大值):
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- 不同 Vgs 时的栅极电荷 (Qg)(最大值):
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- Vgs(最大值):
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- 不同 Vds 时的输入电容(Ciss)(最大值):
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图片 | 型号 | 品牌 | 描述 | 价格 | 起订量 | 库存 | 操作 | |
---|---|---|---|---|---|---|---|---|
Global Power Technologies Group | MOSFET N-CH 650V 6.5... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH TO263-3 |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH TO263-3 |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH TO263-3 |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 10.... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 10.... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 10.... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 6A... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 6A... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 6A... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 7.3... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 7.3... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 7.3... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 8.7... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 8.7... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 8.7... |
-
|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 10.... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 10.... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 10.... |
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|
1 | 580 | 提交询价 | |||
Infineon Technologies | MOSFET N-CH 650V 13.... |
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|
1 | 580 | 提交询价 |